Difference between DDR, DDR2 and DDR3 RAM

Difference between DDR, DDR2 and DDR3 RAM

DDR (DDR1), DDR2 and DDR3 are different types of SDRAM that are used in computers. DDR2 provides a faster transfer rate, bus clock and is more power-friendly compared to DDR1. DDR3 is an advanced version of the same technology. It enables faster bus speeds and higher peak throughput than earlier memory technologies. All three memories differ in various contexts like technical and physical specifications.


Comparison between DDR, DDR2 and DDR3 RAM:


DDR RAM
DDR2 RAM
DDR3 RAM
Full Form
Double Data Rate 1 Random Access Memory
Double Data Rate 2 Random Access Memory
Double Data Rate 3 Random Access Memory
Maximum Theoretical Transfer Rate (MB/s)
DDR200 -1600
DDR266 - 2133
DDR333 - 2666
DDR400 - 3200

DDR2(400) - 3200
DDR2(533) –  4266
DDR2(667) - 5333
DDR2 (800) – 6400
DDR2(1066) - 8533
DDR3(800) - 6400
DDR3(1066) – 8500
DDR3(1333) - 10666
DDR3(1600) – 12800

Bus Speed (MHz)
DDR200 -100
DDR266 - 133
DDR333 - 166
DDR400 - 200

DDR2(400) - 200
DDR2(533) –  266
DDR2(667) - 333
DDR2 (800) – 400
DDR3(800) - 400
DDR3(1066) – 533
DDR3(1333) - 667
DDR3(1600) – 800
Voltage
Operates at comparatively highest voltage.
Lower in comparison to DDR and higher in comparison to DDR3.
Operates at comparatively lowest voltage.
Typical Latency
3
5
7
Number of Pins
184
240
240
Features
  • Prefetching – based on a 2n-prefetch architecture.
  • Double transition clocking – provides twice the bandwidth of SDRAM without the need of increasing the clock frequency.
  • Stub-Series Terminated Logic_2 (SSTL_2) low-voltage signaling technology – It uses e 2.5-V signaling specification SSTL_2.
  • Strobe-based data bus – Used for locating the data in a more accurate manner.
  • Connector of 240 pins
  • Faster clocks
  • 1.8-V operation and signaling
  • A simplified command set
  • An eight bit prefetch buffer stores more data than the 4-bit buffer of DDR2.
  • Fly-by topology for the commands, addresses, control signals, and clock to improve the integrity of signals.
  • 1.5-V signaling reduces power consumption from the 1.8- V signaling for DDR2.
  • A thermal sensor integrated on the DIMM module signals the chipset to throttle memory traffic.
Packaging
Thin small-outline package
Ball Grid Array
Ball Grid Array
Succeeded by
DDR2
DDR3
DDR4
Data Strobes
Single-ended
Single-ended or differential
Differential only
Modules
184-pin DIMM unbuffered registered; 200-pin SODIMM; 172-pin MicroDIMM
240-pin DIMM unbuffered registered; 200-pin SODIMM; 214-pin MicroDIMM
240-pin DIMM (same size as DDR2 but are electrically incompatible with DDR2 DIMMs and have a different key notch location). DDR3 SO-DIMMs have 204 pins.
Prefetch Buffer (bits)
2
4
8

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